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1. product profile 1.1 general description npn low v cesat breakthrough in small signal (biss) transistor in a medium power sot223 (sc-73) surface-mounted device (smd) plastic package. pnp complement: pbss4032pz. 1.2 features and benefits ? low collector-emitter sa turation voltage v cesat ? optimized switching time ? high collector curr ent capability i c and i cm ? high collector cu rrent gain (h fe ) at high i c ? high energy efficiency due to less heat generation ? aec-q101 qualified ? smaller required printed-circuit board (pcb) area than for conventional transistors 1.3 applications ? dc-to-dc conversion ? battery-driven devices ? power management ? charging circuits 1.4 quick reference data [1] pulse test: t p 300 s; ? 0.02. PBSS4032NZ 30 v, 4.9 a npn low v cesat (biss) transistor rev. 01 ? 31 march 2010 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit v ceo collector-emitter voltage open base - - 30 v i c collector current - - 4.9 a i cm peak collector current single pulse; t p 1ms --10a r cesat collector-emitter saturation resistance i c =4a; i b =400ma [1] -4562.5m
PBSS4032NZ_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 31 march 2010 2 of 15 nxp semiconductors PBSS4032NZ 30 v, 4.9 a npn low v cesat (biss) transistor 2. pinning information 3. ordering information 4. marking 5. limiting values table 2. pinning pin description simplified outline graphic symbol 1base 2 collector 3emitter 4 collector 13 2 4 sym016 2, 4 3 1 table 3. ordering information type number package name description version PBSS4032NZ sc-73 plastic surface-mounted package with increased heat sink; 4 leads sot223 table 4. marking codes type number marking code PBSS4032NZ pb4032nz table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cbo collector-base voltage open emitter - 30 v v ceo collector-emitter voltage open base - 30 v v ebo emitter-base voltage open collector - 5 v i c collector current - 4.9 a i cm peak collector current single pulse; t p 1ms -10a i b base current - 1 a
PBSS4032NZ_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 31 march 2010 3 of 15 nxp semiconductors PBSS4032NZ 30 v, 4.9 a npn low v cesat (biss) transistor [1] device mounted on an fr4 pcb, single-si ded copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper , tin-plated, mounting pad for collector 6 cm 2 . [3] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. p tot total power dissipation t amb 25 c [1] - 700 mw [2] - 1700 mw [3] - 2000 mw t j junction temperature - 150 c t amb ambient temperature ? 55 +150 c t stg storage temperature ? 65 +150 c (1) ceramic pcb, al 2 o 3 , standard footprint (2) fr4 pcb, mounting pad for collector 6 cm 2 (3) fr4 pcb, standard footprint fig 1. power derating curves table 5. limiting values ?continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit t amb ( c) ? 75 175 125 25 75 ? 25 006aac152 1.0 1.5 0.5 2.0 2.5 p tot (w) 0.0 (1) (3) (2)
PBSS4032NZ_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 31 march 2010 4 of 15 nxp semiconductors PBSS4032NZ 30 v, 4.9 a npn low v cesat (biss) transistor 6. thermal characteristics [1] device mounted on an fr4 pcb, single-si ded copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper , tin-plated, mounting pad for collector 6 cm 2 . [3] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] --180k/w [2] --75k/w [3] --65k/w r th(j-sp) thermal resistance from junction to solder point --15k/w fr4 pcb, standard footprint fig 2. transient thermal impedance from junction to am bient as a function of pu lse duration; typical values 006aac153 10 1 10 2 10 3 z th(j-a) (k/w) 10 ? 1 10 ? 5 10 10 ? 2 10 ? 4 10 2 10 ? 1 t p (s) 10 ? 3 10 3 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0
PBSS4032NZ_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 31 march 2010 5 of 15 nxp semiconductors PBSS4032NZ 30 v, 4.9 a npn low v cesat (biss) transistor fr4 pcb, mounting pad for collector 6 cm 2 fig 3. transient thermal impedance from junction to am bient as a function of pu lse duration; typical values ceramic pcb, al 2 o 3 , standard footprint fig 4. transient thermal impedance from junction to am bient as a function of pu lse duration; typical values 006aac154 10 ? 5 10 10 ? 2 10 ? 4 10 2 10 ? 1 t p (s) 10 ? 3 10 3 1 10 1 10 2 z th(j-a) (k/w) 10 ? 1 0.75 0.50 0.33 0.20 0.01 0.10 0.05 0.02 0 duty cycle = 1 006aac155 10 ? 5 10 10 ? 2 10 ? 4 10 2 10 ? 1 t p (s) 10 ? 3 10 3 1 10 1 10 2 z th(j-a) (k/w) 10 ? 1 0.75 0.50 0.33 0.20 0.01 0.10 0.05 0.02 0 duty cycle = 1
PBSS4032NZ_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 31 march 2010 6 of 15 nxp semiconductors PBSS4032NZ 30 v, 4.9 a npn low v cesat (biss) transistor 7. characteristics [1] pulse test: t p 300 s; ? 0.02. table 7. characteristics t amb =25 c unless otherwise specified. symbol parameter conditions min typ max unit i cbo collector-base cut-off current v cb =30v; i e = 0 a - - 100 na v cb =30v; i e =0a; t j =150 c --50 a i ces collector-emitter cut-off current v ce =24v; v be = 0 v - - 100 na i ebo emitter-base cut-off current v eb =5v; i c = 0 a - - 100 na h fe dc current gain [1] v ce =2v; i c = 500 ma 300 500 - v ce =2v; i c = 1 a 300 500 - v ce =2v; i c = 2 a 250 450 - v ce =2v; i c = 4 a 200 350 - v ce =2v; i c = 6 a 150 275 - v cesat collector-emitter saturation voltage [1] i c =1a; i b = 50 ma - 90 125 mv i c =1a; i b = 10 ma - 130 180 mv i c =2a; i b = 40 ma - 150 210 mv i c =4a; i b = 400 ma - 180 250 mv i c =4a; i b = 40 ma - 250 375 mv i c =5.4a; i b = 270 ma - 240 340 mv r cesat collector-emitter saturation resistance i c =4a; i b =400ma [1] -4562.5m v besat base-emitter saturation voltage i c =1a; i b =100ma [1] - 0.75 0.9 v i c =4a; i b =400ma [1] - 0.92 1.05 v v beon base-emitter turn-on voltage v ce =2v; i c =2a [1] - 0.77 0.85 v t d delay time v cc =12.5v; i c =1a; i bon =0.05a; i boff = ? 0.05 a -35-ns t r rise time - 30 - ns t on turn-on time - 65 - ns t s storage time - 150 - ns t f fall time - 65 - ns t off turn-off time - 215 - ns f t transition frequency v ce =10v; i c = 100 ma; f=100mhz - 145 - mhz c c collector capacitance v cb =10v; i e =i e =0a; f=1mhz -65-pf
PBSS4032NZ_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 31 march 2010 7 of 15 nxp semiconductors PBSS4032NZ 30 v, 4.9 a npn low v cesat (biss) transistor v ce =2v (1) t amb = 100 c (2) t amb =25 c (3) t amb = ? 55 c t amb =25 c fig 5. dc current gain as a function of collector current; typical values fig 6. collector current as a function of collector-emitter voltage; typical values v ce =2v (1) t amb = ? 55 c (2) t amb =25 c (3) t amb = 100 c i c /i b =20 (1) t amb = ? 55 c (2) t amb =25 c (3) t amb = 100 c fig 7. base-emitter voltage as a function of collector current; typical values fig 8. base-emitter saturation voltage as a function of collector current; typical values 006aac136 400 600 200 800 1000 h fe 0 i c (ma) 10 ? 1 10 4 10 3 110 2 10 (1) (3) (2) v ce (v) 0.0 5.0 4.0 2.0 3.0 1.0 006aac137 4.0 8.0 12.0 i c (a) 0.0 i b (ma) = 70 63 56 49 42 35 28 21 14 7 006aac138 0.4 0.8 1.2 v be (v) 0.0 i c (ma) 10 ? 1 10 4 10 3 110 2 10 (1) (3) (2) 006aac139 0.5 0.9 1.3 v besat (v) 0.1 i c (ma) 10 ? 1 10 4 10 3 110 2 10 (1) (3) (2)
PBSS4032NZ_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 31 march 2010 8 of 15 nxp semiconductors PBSS4032NZ 30 v, 4.9 a npn low v cesat (biss) transistor i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = ? 55 c t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 9. collector-emitter saturation voltage as a function of collector current; typical values fig 10. collector-emitter saturation voltage as a function of collector current; typical values i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = ? 55 c t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 11. collector-emitter saturation resistance as a function of collector current; typical values fig 12. collector-emitter saturation resistance as a function of collector current; typical values 006aac140 i c (ma) 10 ? 1 10 4 10 3 110 2 10 10 ? 1 1 v cesat (v) 10 ? 2 (1) (3) (2) 006aac141 i c (ma) 10 ? 1 10 4 10 3 110 2 10 10 ? 1 1 v cesat (v) 10 ? 2 (1) (3) (2) i c (ma) 10 ? 1 10 4 10 3 110 2 10 006aac142 1 10 ? 1 10 2 10 10 3 r cesat ( ) 10 ? 2 (1) (2) (3) i c (ma) 10 ? 1 10 4 10 3 110 2 10 006aac143 1 10 ? 1 10 2 10 10 3 r cesat ( ) 10 ? 2 (1) (2) (3)
PBSS4032NZ_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 31 march 2010 9 of 15 nxp semiconductors PBSS4032NZ 30 v, 4.9 a npn low v cesat (biss) transistor 8. test information 8.1 quality information this product has been qualified in accordance with the automotive electronics council (aec) standard q101 - stress test qualificat ion for discrete semiconductors , and is suitable for use in automotive applications. fig 13. biss transistor sw itching time definition fig 14. test circuit for switching times 006aaa003 i bon (100 %) i b input pulse (idealized waveform) i boff 90 % 10 % i c (100 %) i c t d t on 90 % 10 % t r output pulse (idealized waveform) t f t t s t off r c r2 r1 dut mlb826 v o r b (probe) 450 (probe) 450 oscilloscope oscilloscope v bb v i v cc
PBSS4032NZ_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 31 march 2010 10 of 15 nxp semiconductors PBSS4032NZ 30 v, 4.9 a npn low v cesat (biss) transistor 9. package outline 10. packing information [1] for further information and the avai lability of packing methods, see section 14 . fig 15. package outline sot223 (sc-73) 04-11-10 dimensions in mm 6.7 6.3 3.1 2.9 1.8 1.5 7.3 6.7 3.7 3.3 1.1 0.7 13 2 4 4.6 2.3 0.8 0.6 0.32 0.22 table 8. packing methods the indicated -xxx are the last thre e digits of the 12nc ordering code. [1] type number package description packing quantity 1000 4000 PBSS4032NZ sot223 8 mm pitch, 12 mm tape and reel -115 -135
PBSS4032NZ_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 31 march 2010 11 of 15 nxp semiconductors PBSS4032NZ 30 v, 4.9 a npn low v cesat (biss) transistor 11. soldering fig 16. reflow soldering footprint sot223 (sc-73) fig 17. wave soldering footprint sot223 (sc-73) sot223_ fr 1.2 (4 ) 1.2 (3 ) 1.3 (4 ) 1.3 (3 ) 6.15 7 3.85 3.6 3.5 0.3 3.9 7.65 2.3 2.3 6.1 4 23 1 solder lands solder resist occupied area solder paste dimensions in mm sot223_ fw 1.9 6.7 8.9 8.7 1.9 (3 ) 1.9 (2 ) 1.1 6.2 2.7 2.7 2 4 3 1 solder lands solder resist occupied area preferred transport direction during soldering dimensions in mm
PBSS4032NZ_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 31 march 2010 12 of 15 nxp semiconductors PBSS4032NZ 30 v, 4.9 a npn low v cesat (biss) transistor 12. revision history table 9. revision history document id release date data sheet status change notice supersedes PBSS4032NZ_1 20100331 pr oduct data sheet - -
PBSS4032NZ_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 31 march 2010 13 of 15 nxp semiconductors PBSS4032NZ 30 v, 4.9 a npn low v cesat (biss) transistor 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 13.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer?s third party customer(s) (hereinafter both referred to as ?application?). it is customer?s sole responsibility to check whether the nxp semiconductors product is suitable and fit for the application planned. customer has to do all necessary testing for the application in order to avoid a default of the application and the product. nxp semiconducto rs does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
PBSS4032NZ_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 31 march 2010 14 of 15 nxp semiconductors PBSS4032NZ 30 v, 4.9 a npn low v cesat (biss) transistor 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors PBSS4032NZ 30 v, 4.9 a npn low v cesat (biss) transistor ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 31 march 2010 document identifier: PBSS4032NZ_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 8.1 quality information . . . . . . . . . . . . . . . . . . . . . . 9 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 packing information . . . . . . . . . . . . . . . . . . . . 10 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 13 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 14 contact information. . . . . . . . . . . . . . . . . . . . . 14 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

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